Infineon IRFZ34NPBF

Infineon · FETs & Power MOSFETs · MPN IRFZ34NPBF

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Specifications

Gate Charge(Qg)34nC@10V
Drain to Source Voltage55V
Current - Continuous Drain(Id)29A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation68W
Reverse Transfer Capacitance (Crss@Vds)100pF
RDS(on)40mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)700pF
TypeN-Channel

Technical details

N-Channel 55V 29A 68W Through Hole TO-220AB

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