Infineon · FETs & Power MOSFETs · MPN IRFU5410PBF
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| Gate Charge(Qg) | 58nC |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 260pF |
| Current - Continuous Drain(Id) | 13A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 66W |
| Reverse Transfer Capacitance (Crss@Vds) | 170pF |
| RDS(on) | 205mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 760pF |
| Type | P-Channel |
P-Channel 100V 13A 66W Through Hole TO-251(IPAK)