Infineon IRFU5305PBF

Infineon · FETs & Power MOSFETs · MPN IRFU5305PBF

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Specifications

Gate Charge(Qg)63nC
Drain to Source Voltage55V
Current - Continuous Drain(Id)31A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation110W
Reverse Transfer Capacitance (Crss@Vds)250pF
RDS(on)65mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)1.2nF

Technical details

P-Channel 55V 31A 110W Through Hole IPAK

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