Infineon IRFU3910PBF

Infineon · FETs & Power MOSFETs · MPN IRFU3910PBF

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Specifications

Output Capacitance(Coss)640pF
Pd - Power Dissipation79W
Configuration-
Gate Charge(Qg)44nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)16A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Reverse Transfer Capacitance (Crss@Vds)640pF
RDS(on)115mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)7.5pF

Technical details

N-Channel 100V 16A 79W Through Hole TO-251(IPAK)

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