Infineon IRFU3410PBF

Infineon · FETs & Power MOSFETs · MPN IRFU3410PBF

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Specifications

Gate Charge(Qg)56nC
Drain to Source Voltage100V
Current - Continuous Drain(Id)31A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation110W
Reverse Transfer Capacitance (Crss@Vds)26pF
RDS(on)39mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.69nF

Technical details

N-Channel 100V 31A 110W Through Hole TO-251

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