Infineon · FETs & Power MOSFETs · MPN IRFU3410PBF
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| Gate Charge(Qg) | 56nC |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 31A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 110W |
| Reverse Transfer Capacitance (Crss@Vds) | 26pF |
| RDS(on) | 39mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.69nF |
N-Channel 100V 31A 110W Through Hole TO-251