Infineon · FETs & Power MOSFETs · MPN IRFU13N20DPBF
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| Gate Charge(Qg) | 25nC@10V |
|---|---|
| Drain to Source Voltage | 200V |
| Current - Continuous Drain(Id) | 13A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 110W |
| Reverse Transfer Capacitance (Crss@Vds) | 35pF |
| RDS(on) | 2.335Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 830pF |
200V 13A 3V 110W 2.335Ω@10V 1 N-channel IPAK Single FETs, MOSFETs RoHS