Infineon · FETs & Power MOSFETs · MPN IRFU1018EPBF
No reviews yet — be the first to review Infineon IRFU1018EPBF.
| Gate Charge(Qg) | 69nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 270pF |
| Current - Continuous Drain(Id) | 79A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 110W |
| Reverse Transfer Capacitance (Crss@Vds) | 130pF |
| RDS(on) | 8.4mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.29nF |
| Type | N-Channel |
60V 79A 4V 110W 8.4mΩ@10V 1 N-channel N-Channel IPAK(TO-251AA) Single FETs, MOSFETs RoHS