Infineon · FETs & Power MOSFETs · MPN IRFS59N10DTRR
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| Gate Charge(Qg) | 114nC |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 740pF |
| Current - Continuous Drain(Id) | 59A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 5.5V |
| Pd - Power Dissipation | 200W |
| Reverse Transfer Capacitance (Crss@Vds) | 190pF |
| RDS(on) | 25mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.45nF |
| Type | N-Channel |
100V 59A 5.5V 200W 25mΩ@10V 1 N-channel N-Channel D2PAK Single FETs, MOSFETs