Infineon IRFS31N20DPBF

Infineon · FETs & Power MOSFETs · MPN IRFS31N20DPBF

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Specifications

Gate Charge(Qg)70nC@10V
Drain to Source Voltage200V
Output Capacitance(Coss)2.86nF
Current - Continuous Drain(Id)31A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))5.5V
Pd - Power Dissipation200W
Reverse Transfer Capacitance (Crss@Vds)78pF
RDS(on)82mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)390pF
TypeN-Channel

Technical details

200V 31A 5.5V 200W 82mΩ@10V 1 N-channel N-Channel D2PAK Single FETs, MOSFETs RoHS

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