Infineon IRFS3107PBF

Infineon · FETs & Power MOSFETs · MPN IRFS3107PBF

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Specifications

Drain to Source Voltage75V
Gate Charge(Qg)240nC@10V
Current - Continuous Drain(Id)195A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation370W
RDS(on)3mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)9.37nF

Technical details

75V 195A 4V 370W 3mΩ@10V 1 N-channel D2PAK Single FETs, MOSFETs RoHS

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