Infineon · FETs & Power MOSFETs · MPN IRFR9N20DTRPBF
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| Gate Charge(Qg) | 27nC@10V |
|---|---|
| Drain to Source Voltage | 200V |
| Output Capacitance(Coss) | 670pF |
| Current - Continuous Drain(Id) | 9.4A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 5.5V |
| Pd - Power Dissipation | 86W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 380mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | - |
| Type | N-Channel |
200V 9.4A 5.5V 86W 380mΩ@10V 1 N-channel N-Channel TO-252-2(DPAK) Single FETs, MOSFETs RoHS