Infineon IRFR9120NPBF

Infineon · FETs & Power MOSFETs · MPN IRFR9120NPBF

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Specifications

Drain to Source Voltage100V
Gate Charge(Qg)27nC@10V
Output Capacitance(Coss)110pF
Current - Continuous Drain(Id)6.6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation40W
Reverse Transfer Capacitance (Crss@Vds)70pF
RDS(on)480mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)350pF
TypeP-Channel

Technical details

100V 6.6A 4V 40W 480mΩ@10V 1 P-Channel P-Channel TO-252 Single FETs, MOSFETs RoHS

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