Infineon IRFR825TRPBF

Infineon · FETs & Power MOSFETs · MPN IRFR825TRPBF

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Specifications

Gate Charge(Qg)34nC
Drain to Source Voltage500V
Current - Continuous Drain(Id)6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation119W
Reverse Transfer Capacitance (Crss@Vds)15pF
RDS(on)1.05Ω@10V
Number1 N-channel
Input Capacitance(Ciss)1.346nF

Technical details

500V 6A 3V 119W 1.05Ω@10V 1 N-channel DPAK Single FETs, MOSFETs RoHS

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