Infineon IRFR812TRPBF

Infineon · FETs & Power MOSFETs · MPN IRFR812TRPBF

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Specifications

Gate Charge(Qg)20nC@10V
Drain to Source Voltage500V
Current - Continuous Drain(Id)3.6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation78W
RDS(on)1.85Ω@10V
Number1 N-channel

Technical details

500V 3.6A 3V 78W 1.85Ω@10V 1 N-channel DPAK Single FETs, MOSFETs RoHS

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