Infineon IRFR5410TRPBF

Infineon · FETs & Power MOSFETs · MPN IRFR5410TRPBF

No reviews yet — be the first to review Infineon IRFR5410TRPBF.

Specifications

Gate Charge(Qg)58nC
Drain to Source Voltage100V
Current - Continuous Drain(Id)13A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation66W
Reverse Transfer Capacitance (Crss@Vds)170pF
RDS(on)205mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)760pF
TypeP-Channel

Technical details

P-Channel 100V 13A 66W Surface Mount DPAK(TO-252AA)

Related FETs & Power MOSFETs