Infineon IRFR430ATRPBF

Infineon · FETs & Power MOSFETs · MPN IRFR430ATRPBF

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Specifications

Gate Charge(Qg)24nC@10V
Drain to Source Voltage500V
Output Capacitance(Coss)75pF
Current - Continuous Drain(Id)5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation110W
Reverse Transfer Capacitance (Crss@Vds)4.5pF
RDS(on)1.7Ω@10V
Number1 N-channel
Input Capacitance(Ciss)490pF
TypeN-Channel

Technical details

N-Channel 500V 5A 110W Surface Mount TO-252

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