Infineon IRFR4105PBF

Infineon · FETs & Power MOSFETs · MPN IRFR4105PBF

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Specifications

Gate Charge(Qg)34nC
Drain to Source Voltage55V
Output Capacitance(Coss)240pF
Current - Continuous Drain(Id)27A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation68W
Reverse Transfer Capacitance (Crss@Vds)100pF
RDS(on)45mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)700pF
TypeN-Channel

Technical details

55V 27A 4V 68W 45mΩ@10V 1 N-channel N-Channel DPAK Single FETs, MOSFETs RoHS

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