Infineon IRFR3411TRPBF

Infineon · FETs & Power MOSFETs · MPN IRFR3411TRPBF

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Specifications

Gate Charge(Qg)71nC
Drain to Source Voltage100V
Current - Continuous Drain(Id)32A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation130W
Reverse Transfer Capacitance (Crss@Vds)40pF
RDS(on)36mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.96nF

Technical details

N-Channel 100V 32A 130W Surface Mount DPAK(TO-252AA)

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