Infineon IRFR15N20DPBF

Infineon · FETs & Power MOSFETs · MPN IRFR15N20DPBF

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Specifications

Gate Charge(Qg)27nC
Drain to Source Voltage200V
Current - Continuous Drain(Id)17A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))5.5V
Pd - Power Dissipation3W
Reverse Transfer Capacitance (Crss@Vds)31pF
RDS(on)165mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)910pF
TypeN-Channel

Technical details

200V 17A 5.5V 3W 165mΩ@10V 1 N-channel N-Channel DPAK Single FETs, MOSFETs RoHS

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