Infineon IRFR13N20DTRPBF

Infineon · FETs & Power MOSFETs · MPN IRFR13N20DTRPBF

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Specifications

Gate Charge(Qg)38nC@10V
Drain to Source Voltage200V
Output Capacitance(Coss)140pF
Current - Continuous Drain(Id)13A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))5.5V
Pd - Power Dissipation110W
Reverse Transfer Capacitance (Crss@Vds)35pF
RDS(on)235mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)830pF
TypeN-Channel

Technical details

N-Channel 200V 13A 110W Surface Mount TO-252

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