Infineon · FETs & Power MOSFETs · MPN IRFR13N20DPBF-IR
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| Gate Charge(Qg) | 38nC@10V |
|---|---|
| Drain to Source Voltage | 200V |
| Current - Continuous Drain(Id) | 13A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 5.5V |
| Pd - Power Dissipation | 110W |
| RDS(on) | 235mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 830pF |
200V 13A 5.5V 110W 235mΩ@10V 1 N-channel DPAK(TO-252AA) Single FETs, MOSFETs RoHS