Infineon IRFR120ZPBF

Infineon · FETs & Power MOSFETs · MPN IRFR120ZPBF

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Specifications

Drain to Source Voltage100V
Gate Charge(Qg)10nC@10V
Output Capacitance(Coss)150pF
Current - Continuous Drain(Id)8.7A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation35W
Reverse Transfer Capacitance (Crss@Vds)24pF
RDS(on)190mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)310pF
TypeN-Channel

Technical details

100V 8.7A 4V 35W 190mΩ@10V 1 N-channel N-Channel DPAK(TO-252AA) Single FETs, MOSFETs RoHS

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