Infineon IRFR120NPBF

Infineon · FETs & Power MOSFETs · MPN IRFR120NPBF

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Specifications

Gate Charge(Qg)25nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)9.4A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation48W
RDS(on)210mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)330pF
TypeN-Channel

Technical details

100V 9.4A 4V 48W 210mΩ@10V 1 N-channel N-Channel DPAK Single FETs, MOSFETs RoHS

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