Infineon · FETs & Power MOSFETs · MPN IRFR1018EPBF-INF
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| Gate Charge(Qg) | 69nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 56A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 110W |
| RDS(on) | 8.4mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.29nF |
60V 56A 4V 110W 8.4mΩ@10V 1 N-channel DPAK(TO-252AA) Single FETs, MOSFETs RoHS