Infineon IRFPG30PBF

Infineon · FETs & Power MOSFETs · MPN IRFPG30PBF

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Specifications

Gate Charge(Qg)80nC
Drain to Source Voltage1kV
Output Capacitance(Coss)140pF
Current - Continuous Drain(Id)3.1A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation125W
Reverse Transfer Capacitance (Crss@Vds)50pF
RDS(on)5Ω@10V
Number1 N-channel
Input Capacitance(Ciss)980pF
TypeN-Channel

Technical details

1kV 3.1A 4V 125W 5Ω@10V 1 N-channel N-Channel TO-247AC-3 Single FETs, MOSFETs RoHS

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