Infineon · FETs & Power MOSFETs · MPN IRFPF50PBF
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| Gate Charge(Qg) | 200nC@10V |
|---|---|
| Drain to Source Voltage | 900V |
| Current - Continuous Drain(Id) | 6.7A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 190W |
| Reverse Transfer Capacitance (Crss@Vds) | 200pF |
| RDS(on) | 1.6Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.9nF |
| Type | N-Channel |
N-Channel 900V 6.7A 190W Through Hole TO-247AC