Infineon IRFP90N20DPBF

Infineon · FETs & Power MOSFETs · MPN IRFP90N20DPBF

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Specifications

Gate Charge(Qg)270nC
Drain to Source Voltage200V
Output Capacitance(Coss)8.35nF
Current - Continuous Drain(Id)94A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation580W
Reverse Transfer Capacitance (Crss@Vds)170pF
RDS(on)23mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)6.04nF
TypeN-Channel

Technical details

N-Channel 200V 94A 580W Through Hole TO-247AC

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