Infineon IRFP4868PBF

Infineon · FETs & Power MOSFETs · MPN IRFP4868PBF

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Specifications

Gate Charge(Qg)270nC@10V
Drain to Source Voltage300V
Output Capacitance(Coss)612pF
Current - Continuous Drain(Id)70A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation517W
Reverse Transfer Capacitance (Crss@Vds)193pF
RDS(on)32mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)10.774nF

Technical details

N-Channel 300V 70A 517W Through Hole TO-247AC

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