Infineon IRFP4768PBF

Infineon · FETs & Power MOSFETs · MPN IRFP4768PBF

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Specifications

Gate Charge(Qg)270nC@10V
Drain to Source Voltage250V
Output Capacitance(Coss)700pF
Current - Continuous Drain(Id)93A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation520W
Reverse Transfer Capacitance (Crss@Vds)210pF
RDS(on)17.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)10.88nF
TypeN-Channel

Technical details

N-Channel 250V 93A 520W Through Hole TO-247AC

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