Infineon IRFP448PBF

Infineon · FETs & Power MOSFETs · MPN IRFP448PBF

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Specifications

Gate Charge(Qg)84nC@10V
Drain to Source Voltage500V
Current - Continuous Drain(Id)11A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation180W
Reverse Transfer Capacitance (Crss@Vds)220pF
RDS(on)600mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.9nF

Technical details

500V 11A 2V 180W 600mΩ@10V 1 N-channel TO-247AC-3 Single FETs, MOSFETs RoHS

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