Infineon IRFP4468PBF

Infineon · FETs & Power MOSFETs · MPN IRFP4468PBF

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Specifications

Gate Charge(Qg)540nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)1.36nF
Current - Continuous Drain(Id)290A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation520W
Reverse Transfer Capacitance (Crss@Vds)540pF
RDS(on)2.6mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)19.86nF
TypeN-Channel

Technical details

N-Channel 100V 290A 520W Through Hole TO-247AC

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