Infineon IRFP4368PBF

Infineon · FETs & Power MOSFETs · MPN IRFP4368PBF

No reviews yet — be the first to review Infineon IRFP4368PBF.

Specifications

Gate Charge(Qg)570nC@10V
Drain to Source Voltage75V
Output Capacitance(Coss)1.67nF
Current - Continuous Drain(Id)195A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation520W
Reverse Transfer Capacitance (Crss@Vds)770pF
RDS(on)1.85mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)19.23nF
TypeN-Channel

Technical details

N-Channel 75V 195A 520W Through Hole TO-247AC

Related FETs & Power MOSFETs