Infineon IRFP4229PBF

Infineon · FETs & Power MOSFETs · MPN IRFP4229PBF

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Specifications

Output Capacitance(Coss)390pF
Pd - Power Dissipation310W
Configuration-
Gate Charge(Qg)110nC@10V
Drain to Source Voltage250V
Current - Continuous Drain(Id)44A
Operating Temperature --40℃~+175℃
Gate Threshold Voltage (Vgs(th))5V
Reverse Transfer Capacitance (Crss@Vds)100pF
RDS(on)46mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.56nF

Technical details

N-Channel 250V 44A 310W Through Hole TO-247-3

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