Infineon IRFP4227PBF

Infineon · FETs & Power MOSFETs · MPN IRFP4227PBF

No reviews yet — be the first to review Infineon IRFP4227PBF.

Specifications

Gate Charge(Qg)98nC@10V
Drain to Source Voltage200V
Current - Continuous Drain(Id)65A
Operating Temperature --40℃~+175℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation330W
Reverse Transfer Capacitance (Crss@Vds)91pF
RDS(on)25mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)-

Technical details

N-Channel 200V 65A 330W Through Hole TO-247AC

Related FETs & Power MOSFETs