Infineon IRFP4127PBF

Infineon · FETs & Power MOSFETs · MPN IRFP4127PBF

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Specifications

Gate Charge(Qg)150nC@10V
Drain to Source Voltage200V
Current - Continuous Drain(Id)75A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation341W
RDS(on)21mΩ@10V
Number1 N-channel

Technical details

200V 75A 5V 341W 21mΩ@10V 1 N-channel TO-247 Single FETs, MOSFETs RoHS

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