Infineon IRFP4110PBF

Infineon · FETs & Power MOSFETs · MPN IRFP4110PBF

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Specifications

Gate Charge(Qg)210nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)670pF
Current - Continuous Drain(Id)180A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation370W
Reverse Transfer Capacitance (Crss@Vds)250pF
RDS(on)4.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)9.62nF
TypeN-Channel

Technical details

N-Channel 100V 180A 370W Through Hole TO-247AC

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