Infineon IRFP2907PBF

Infineon · FETs & Power MOSFETs · MPN IRFP2907PBF

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Specifications

Gate Charge(Qg)620nC@10V
Drain to Source Voltage75V
Current - Continuous Drain(Id)209A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation470W
Reverse Transfer Capacitance (Crss@Vds)500pF
RDS(on)4.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)13nF
TypeN-Channel

Technical details

N-Channel 75V 209A 470W Through Hole TO-247AC

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