Infineon IRFP250NPBF

Infineon · FETs & Power MOSFETs · MPN IRFP250NPBF

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Specifications

Gate Charge(Qg)123nC
Drain to Source Voltage200V
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation214W
Reverse Transfer Capacitance (Crss@Vds)83pF
RDS(on)75mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.159nF
TypeN-Channel

Technical details

N-Channel 200V 30A 214W Through Hole TO-247AC

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