Infineon IRFL4310PBF

Infineon · FETs & Power MOSFETs · MPN IRFL4310PBF

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Specifications

Gate Charge(Qg)25nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)2.2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation2.1W
Reverse Transfer Capacitance (Crss@Vds)54pF
RDS(on)200mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)330pF
TypeN-Channel

Technical details

100V 2.2A 4V 2.1W 200mΩ@10V 1 N-channel N-Channel SOT-223 Single FETs, MOSFETs RoHS

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