Infineon IRFI530NPBF

Infineon · FETs & Power MOSFETs · MPN IRFI530NPBF

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage100V
Current - Continuous Drain(Id)-
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation41W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)110mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)-

Technical details

100V 41W 110mΩ@10V 1 N-channel TO-220 Single FETs, MOSFETs

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