Infineon IRFI4212H-117P

Infineon · FETs & Power MOSFETs · MPN IRFI4212H-117P

No reviews yet — be the first to review Infineon IRFI4212H-117P.

Specifications

Current - Continuous Drain(Id)11A
RDS(on)72.5mΩ@10V
Pd - Power Dissipation18W
Gate Threshold Voltage (Vgs(th))5V
Drain to Source Voltage100V
Reverse Transfer Capacitance (Crss@Vds)34pF
Number2 N-Channel
Input Capacitance(Ciss)490pF
Gate Charge(Qg)18nC@10V
Operating Temperature-55℃~+150℃

Technical details

N-Channel Array 100V 11A 18W Through Hole TO-220F-5(Forming)

Related FETs & Power MOSFETs