Infineon IRFHS8342TRPBF

Infineon · FETs & Power MOSFETs · MPN IRFHS8342TRPBF

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Specifications

Gate Charge(Qg)4.2nC
Drain to Source Voltage30V
Current - Continuous Drain(Id)8.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.35V
Pd - Power Dissipation2.1W
Reverse Transfer Capacitance (Crss@Vds)46pF
RDS(on)16mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)600pF

Technical details

N-Channel 30V 8.5A 2.1W Surface Mount PQFN-6(2x2)

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