Infineon IRFHS8342TR2PBF

Infineon · FETs & Power MOSFETs · MPN IRFHS8342TR2PBF

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)4.2nC@4.5V
Output Capacitance(Coss)100pF
Current - Continuous Drain(Id)8.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.35V
Pd - Power Dissipation2.1W
Reverse Transfer Capacitance (Crss@Vds)46pF
RDS(on)16mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)600pF
TypeN-Channel

Technical details

30V 8.5A 2.35V 2.1W 16mΩ@10V 1 N-channel N-Channel TSDSON-6 Single FETs, MOSFETs RoHS

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