Infineon · FETs & Power MOSFETs · MPN IRFHM8363TRPBF
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| Gate Charge(Qg) | 6.7nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 11A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.35V |
| Pd - Power Dissipation | 2.7W |
| Reverse Transfer Capacitance (Crss@Vds) | 100pF |
| RDS(on) | 20.4mΩ@4.5V |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 1.165nF |
30V 11A 2.7W Surface Mount PQFN-8(3.3x3.3)