Infineon IRFHM8342TRPBF

Infineon · FETs & Power MOSFETs · MPN IRFHM8342TRPBF

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)5nC@4.5V
Output Capacitance(Coss)102pF
Current - Continuous Drain(Id)20A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.35V
Pd - Power Dissipation20W
Reverse Transfer Capacitance (Crss@Vds)48pF
RDS(on)25mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)560pF
TypeN-Channel

Technical details

30V 20A 2.35V 20W 25mΩ@4.5V 1 N-channel N-Channel PQFN-8(3.3x3.3) Single FETs, MOSFETs RoHS

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