Infineon IRFHM8337TRPBF-IR

Infineon · FETs & Power MOSFETs · MPN IRFHM8337TRPBF-IR

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)8.1nC@4.5V
Output Capacitance(Coss)171pF
Current - Continuous Drain(Id)180A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.35V
Pd - Power Dissipation25W
Reverse Transfer Capacitance (Crss@Vds)83pF
RDS(on)12.4mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)755pF
TypeN-Channel

Technical details

30V 180A 2.35V 25W 12.4mΩ@10V 1 N-channel N-Channel PQFN-8(3.3x3.3) Single FETs, MOSFETs RoHS

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