Infineon IRFHM8334TRPBF

Infineon · FETs & Power MOSFETs · MPN IRFHM8334TRPBF

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Specifications

Gate Charge(Qg)7.1nC@4.5V
Drain to Source Voltage30V
Output Capacitance(Coss)260pF
Current - Continuous Drain(Id)13A;43A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.35V
Pd - Power Dissipation2.7W;28W
Reverse Transfer Capacitance (Crss@Vds)110pF
RDS(on)9mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.18nF
TypeN-Channel

Technical details

30V 2.35V 9mΩ@10V 1 N-channel N-Channel PQFN-8(3.3x3.3) Single FETs, MOSFETs RoHS

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