Infineon IRFHM8329TRPBF

Infineon · FETs & Power MOSFETs · MPN IRFHM8329TRPBF

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Specifications

Gate Charge(Qg)26nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)360pF
Current - Continuous Drain(Id)24A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation33W
Reverse Transfer Capacitance (Crss@Vds)180pF
RDS(on)4.8mΩ@10V;6.8mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)1.71nF
Type-

Technical details

N-Channel 30V 24A 33W Surface Mount PQFN-8(3.1x3.1)

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