Infineon IRFHM830TRPBF

Infineon · FETs & Power MOSFETs · MPN IRFHM830TRPBF

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Specifications

Gate Charge(Qg)23nC@4.5V
Drain to Source Voltage30V
Output Capacitance(Coss)350pF
Current - Continuous Drain(Id)21A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.35V
Pd - Power Dissipation37W
Reverse Transfer Capacitance (Crss@Vds)160pF
RDS(on)6mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)2.155nF
TypeN-Channel

Technical details

30V 21A 2.35V 37W 6mΩ@4.5V 1 N-channel N-Channel PQFN(3.3x3.3) Single FETs, MOSFETs RoHS

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