Infineon IRFHM792TRPBF

Infineon · FETs & Power MOSFETs · MPN IRFHM792TRPBF

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Specifications

Gate Charge(Qg)4.2nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)3.4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation2.3W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)195mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)-

Technical details

100V 3.4A 3V 2.3W 195mΩ@10V 1 N-channel PQFN-8(3.3x3.3) Single FETs, MOSFETs RoHS

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